Method of measuring shifted epitaxy layer by buried layer

Details Method of measuring shifted epitaxy layer by buried layer Method of measuring shifted epitaxy layer by buried layer

2006-12-26

2010-06-01

Coleman, W. David (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

C257SE21531

Reexamination Certificate

active

07727851

ABSTRACT:
A method of measuring a shifted extent of a shifted epitaxy layer by an N+buried layer using difference between contact resistances is described. An N-type buried layer comprising a stepped portion is formed at a P-type substrate. An epitaxy layer is formed, comprising a stepped portion, on the N-type buried layer. A plug is formed in the epitaxy layer. An insulating layer is formed on the epitaxy layer. A plurality of contacts are formed in the insulating layer. Resistances of the plurality of contacts are measured and a shifting extent of the stepped portion of the epitaxy layer is calculated using the plurality of contact resistances.

REFERENCES:
patent: 2006/0011952 (2006-01-01), Ohkawa

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