Method of measuring pattern dimension and method of...

Radiant energy – Photocells; circuits and apparatus – With circuit for evaluating a web – strand – strip – or sheet

Reexamination Certificate

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C250S559220, C250S201300

Reexamination Certificate

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10986910

ABSTRACT:
This invention provides a method of measuring semiconductor pattern dimensions capable of realizing a stable and highly precise pattern dimension measurement technique even when the pattern cross-sectional shapes are changed and making the calculation amount relatively small to reduce the calculation time. More specifically, the relationship between cross-sectional shapes of a pattern and measurement errors in a specified image processing technique is evaluated in advance by the electron beam simulation in a pattern measurement system in a length measuring SEM, and in the actual dimension measurement, dimensions of an evaluation objective pattern are measured from image signals of a scanning electron microscope, and errors of the dimensional measurement of the evaluation objective pattern are estimated and revised based on the relationship between cross-sectional shapes of a pattern and measurement errors evaluated in advance, thereby realizing highly precise measurement where dimensional errors depending on pattern solid shapes are eliminated.

REFERENCES:
patent: 4938599 (1990-07-01), Goszyk
Villarubia, J.S., et al—“Scanning Electron Microscope Analog of Scatterometry,” Proceedings of SPIE vol. 4689 (2002)pp. 304-312, USA.
Villarubia, J.S., et al—“A Simulation Study of Repeatability and Bias in the CD-SEM,” Proceedings of SPIE vol. 5038 (2003), pp. 138-149, USA.

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