Method of measuring mobile ion concentration in semiconductor de

Details Method of measuring mobile ion concentration in semiconductor de Method of measuring mobile ion concentration in semiconductor de

1988-12-21

1990-08-21

Eisenzopf, Reinhard J.

Electricity: measuring and testing

Determining nonelectric properties by measuring electric...

437 8, H01L 2100

Patent

active

049509772

ABSTRACT:
Mobile ion concentrations are measured in thick and disordered oxides by heating to a temperature greater than about 250.degree. C.; using a triangular voltage sweep-like method with applied voltages substantially greater than normally used heretofore; and observing peak displacement currents at voltages, e.g., greater than 60 volts, substantially greater than zero volts.

REFERENCES:
patent: 3290179 (1966-12-01), Goulding
patent: 3625749 (1971-12-01), Takayanagi et al.
patent: 3887726 (1975-06-01), Bratter et al.
patent: 4509012 (1985-04-01), Lin
N. J. Chou, "Application of Triangular Voltage Sweep Method to Mobile Charge Studies in MOS Structures", J. Electrochem. Soc.: Solid State Science, Apr. 1971, vol. 118, No. 4, pp. 601-609.
M. Kuhn and D. J. Silversmith, "Ionic Contamination and Transport of Mobile Ions in MOS Structures", J. Electrochem. Soc.: Solid State Science, Jun. 1971, vol. 118, No. 6, pp. 966-970.
H. M. Przewlocki and W. Marciniak: Mobile Charge in MOS Structures, "The Triangular Voltage Sweep Method as a Tool in Studies of Mobile Charge in MOS Structures", phys. stat. sol. (a) 29.265 (1975), pp. 265-274.

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