Method of measuring flat-band status capacitance of a gate...

Details Method of measuring flat-band status capacitance of a gate... Method of measuring flat-band status capacitance of a gate...

2008-01-01

2008-01-01

Nguyen, Vincent Q. (Department: 2858)

Electricity: measuring and testing

Impedance, admittance or other quantities representative of...

Lumped type parameters

C324S762010, C702S170000

Reexamination Certificate

active

07315174

ABSTRACT:
A method of measuring flat-band status capacitance of a gate oxide in a MOS transistor device is disclosed. According to the method of measuring flat-band status capacitance of gate oxide in MOS transistor device, flat-band status capacitance of gate oxide in MOS transistor device can be automatically measured and immediately analyzed by using a characteristics measuring system that changes in accordance with a gate voltage.

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Office Action from the Korean Patent Office, issued Nov. 18, 2006, in counterpart Korean Patent Application No. 10-2005-0133222.

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