Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor
Patent
1987-06-01
1990-03-13
Eisenzopf, Reinhard J.
Electricity: measuring and testing
Measuring, testing, or sensing electricity, per se
With rotor
324613, 324636, 324 731, G01R 2926, G01R 3100
Patent
active
049085700
ABSTRACT:
A method is described for measuring the noise parameters of field effect transistors (FETs) while still in the wafer stage. Instead of conducting lengthy testing of each individual device at the operating frequency of interest after the devices have been diced, mounted and bonded, each of the devices on a wafer is automatically probed to obtain the standard S-parameters and also the FET's output noise power P.sub.n at a frequency at which parasitic probe effects are avoided. The various noise parameters can then be calculated for higher operating frequencies of interest from FET equivalent circuit parameters derived from the S-parameters, and from P.sub.n, either before or after dicing.
REFERENCES:
patent: 4288911 (1981-09-01), Ports
patent: 4324255 (1982-04-01), Barach et al.
patent: 4626775 (1986-12-01), Cho et al.
patent: 4628529 (1986-12-01), Borth et al.
patent: 4630305 (1986-12-01), Borth et al.
"Representation of Noise in Linear Two Ports", by Haus, IRE Proc., 1/1960, pp. 69-74.
Theory of Noisy Fourpoles, by Rothe et al., IRE Proc., 6/56, pp. 811-819.
"Noise Characteristics of Gallium Arsenide Field-Effect Transistors", by Statz, IEEE, Trans. on Elec. Dev., vol. 21, #9, 9/74, pp. 549-562.
"S--Parameter Techniques for Faster, More Accurate Network Design", by Anderson, Hewlett-Packard Journ., 2/67, vol. 18, #6, pp. 3/1-3/12.
"Measurement of GaAs FET Noise Prameters", by Froelich, Watkins-Johnson Comp. Tech.-Notes, vol. 13, #6, Nov./Dec. 1986, pp. 2-12.
"Scattering Parameters Speed Design of High-Frequency Transistor Circuits", by Weinert, Electronics, 9/5/66, pp. 2-1-2-11.
"Derive Noise and Gain Parameters in 10 Seconds", by Tome, Microwaves, 8/78, pp. 53, 55-57.
"A Functional GaAs FET Noise Model", by Podell, IEEE Trans. on Electron. Dev., vol. Ed-28, #5, pp. 511-517, 5/81.
"Two Port Power Flow Analysis Using Generalized Scattering, Parameters", by Bodway, Microwave Journal, vol. 10, #6, 5/67, pp. 6/7-6/9.
Greiling Paul T.
Gupta Madhu S.
Pitzalis Octavius
Rosenbaum Steven E.
Burns W.
Coble Paul M.
Denson-Low Wanda K.
Eisenzopf Reinhard J.
Hughes Aircraft Company
LandOfFree
Method of measuring FET noise parameters does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of measuring FET noise parameters, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of measuring FET noise parameters will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-52649