Coating processes – Measuring – testing – or indicating – Thickness or uniformity of thickness determined
Patent
1984-10-22
1985-12-31
Pianalto, Bernard D.
Coating processes
Measuring, testing, or indicating
Thickness or uniformity of thickness determined
204192R, C23C 1500
Patent
active
045620890
ABSTRACT:
A method of measuring the electrical resistance of thin metallic films manufactured under the influence of a plasma. The measurement proceeds by means of a direct current resistance measurement according to the principle of a two point or four point measuring method. The electrical resistance is determined either in the case of at least one measuring or test current, and the voltage connected to the measuring contacts is measured when no measuring or test current is sent through the film, or the electrical resistance is determined in the case of at least two different measuring or test currents of known magnitudes. The measuring methods are applied in the case of manufacture of metallic layers in semiconductor technology, in particular also for the measurement of the ion current injected in the film by the plasma as well as for the determination of variations in the coating rate.
REFERENCES:
patent: 4331702 (1982-05-01), Hieber et al.
"Structural Changes of Evaporated Tantalum During Film Growth", by K. Hieber and N. M. Mayer, paper presented at the Fifth International Thin Film Congress, Herzlia-On-Sea, Israel, Sep. 21-25, 1981.
"Resistance Measurements by Radio Telemetric System During Film Deposition by Sputtering", by N. M. Mayer, Siemens Forsch-u. Entwickl.-Ber. Bd., 11, (1982), Nr. 6. pp. 322-326.
"Design of Plasma Deposition Reactors", by Wayne L. Johnson, Solid State Technology, Apr. 1983, pp. 191-195.
IPAT 77 Proceedings, Conference "Ion Plating & Allined Techniques", Edinburgh, Jun. 1977, D. G. Teer and B. L. Delcea, pp. 58-69.
"The RF Sputtering Process", by C. W. Pitt, University College, London, Dept. of Electronic & Elec. Eng., pp. 149-156.
1981 American Vacuum Society, J. Vac. Sci. Technol., 18(3), Apr. 1981, "Process Conditions Affecting Hot Electron Trapping in DC Magnetron Sputtered MOS Devices", by N. A. Bojarczuk, pp. 890-894.
Hieber Konrad
Mayer Norbert
Pianalto Bernard D.
Siemens Aktiengesellschaft
LandOfFree
Method of measuring electric resistance of thin metallic layers does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of measuring electric resistance of thin metallic layers , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of measuring electric resistance of thin metallic layers will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1024220