Method of measuring doping characteristic of compound semiconduc

Details Method of measuring doping characteristic of compound semiconduc Method of measuring doping characteristic of compound semiconduc

1996-08-13

1998-01-06

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 8, 117 85, H01L 2100

Patent

active

057054037

ABSTRACT:
A method of sensing the concentration of a doped impurity on a semiconductor in real time and a method of sensing the change of its growth rate dependent on time among the changes of the growing conditions due to doping by using a real time analysis apparatus in growing a heterostructured semiconductor by a MOCVD method. A reflecting signal during the growth by means of a real time analysis apparatus has a periodic property, an amplitude change of a reflecting signal is dependent on an absorption coefficient when an absorption exists on an epitaxial layer, an impurity concentration can be obtained by using the relation of an absorption coefficient and an impurity concentration. In addition, if each peak is independently analyzed, the respective growth rate dependent on time are measured individually, so that the reduced growth rate dependent on time of the growth rate is sensed in a carbon doped AlAs layer.

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