Optics: measuring and testing – Of light reflection
Reexamination Certificate
2005-03-01
2005-03-01
Stafira, Michael P. (Department: 2877)
Optics: measuring and testing
Of light reflection
Reexamination Certificate
active
06862095
ABSTRACT:
In a dielectric constant measuring apparatus provided are a light source for irradiating a substrate with light in a visible or near-ultraviolet wavelength range, a spectroscope for receiving reflected light from the substrate, and a first optical characteristic acquiring unit for acquiring the spectral reflectance of the substrate. Further are provided therein a light source for irradiating the substrate with light in an infrared wavelength range, a spectroscope for receiving transmission light from the substrate, and a second optical characteristic acquiring unit for acquiring the spectral transmittance of the substrate. The dielectric constant of a dielectric film on the substrate is obtained by a first parameter set calculation unit, a second parameter set calculation unit and a dielectric constant calculation unit, using the spectral reflectance and spectral transmittance of the substrate. It is thereby possible to achieve a noncontact measurement of the dielectric constant of the dielectric film on the substrate.
REFERENCES:
patent: 4905170 (1990-02-01), Forouhi et al.
patent: 5796983 (1998-08-01), Herzinger et al.
patent: 5872630 (1999-02-01), Johs et al.
patent: 5943122 (1999-08-01), Holmes
patent: 5999267 (1999-12-01), Zawaideh
patent: 6210745 (2001-04-01), Gaughan et al.
patent: 6556306 (2003-04-01), Jiang et al.
patent: 3285365 (2002-08-01), None
“Reference™ Spectroscopic Ellipsometer for On-Line”, Stehle et al., Future FAB International, (2000) p. 250-251.
“Optical Properties of Amorphous and Polycrystalline Tantalum Oxide Thin Films Measured by Spectroscopic Ellipsometry From 0.03 to 8.5Ev”, Franke et al., thin solid films 388 (2001) 283-289.
“Determination of Optical Anisotrophy in Calcite From Ultraviolet to Mid-Infrared by Generalized Ellipsometry”, Thompson et al., Thin Solid Films, 313-314 (1998)341-346.
“Infared Switching Electrochromic Devices Based on Tungsten Oxide”, Franke et al., J. App. Phys., vol. 88, No. 11 (2000), p. 1-7.
“Measurement of Rutile T102 Dielectric Tensor From 0.148 to 33um Using Generalized Ellipsometry”, Tiwald et al., Proceeding of SPIE vol. 4103 (2000) p. 19-29.
“Dielectric Function of Amorphous Tantalum Oxide From the Far Infrared to the Deep Ultraviolet Spectral Region Measured by Spectroscopic Ellipsometry”, Franke et al., J. App. Phys. vol. 88, No. 9, (2000) p. 1-9.
“Long-Wavelength Cutoff Filters of a New Type”, Dobrowolski et al., App. Optics, vol. 38, No. 22, (1999) p. 4891-4903.
“Feasibility Study to Probe Thin Inorganic and Organic Coatings on Aluminum Substrates by Means of Visible and Infrared Spectroscopic ellipsometry”, Schram et al., Surf. Interface Anal., 30, 507-513 (2000).
“Study of Surface Chemical Changes and Erosion Rates for CV-1144-0 Silicone Under Electron Cyclotron Resonance Oxygen Plasma Exposure”, Yan et al., J. Vac. Sci. Technol. A 19(2) (2001) p. 447-454.
“Phase and Microstructure Investigations of Boron Nitride Thin Films by Spectroscopic Ellipsometry in the Visible and Infrared Spectral Range”, Franke et al., J. App. Phys. 82(6) (1997) p. 2906-2911.
“Dielectric Function of Polycrystalline SiC from 190nm to 15um”, Zollner et al., Phys. Stat. Sol. (B) 215, (1999) p. 21-25.
John A. Wooillam et al., “Overview of Variable Angle Spectroscopic Ellipsometry (VASE),” Part 1: Basic Theory and Typical Applications, SPIE Proc. vol. CR72 (1999) pp3-28 (English Translation of Japanese).
Blaine Johs et al. “Overview of Variable Angle Spectroscopic Ellipsometry (VASE)” Part 2; Advanced Applications, SPIE Proc. vol. CR72 (1999) pp29-58 (English Translation of Japanese).
Blaine Johs et al. “Characterization of Inhomogeneous and Absorbing Thin Films by Combined Spectroscopic Ellipsometry, Reflection, and Transmission Measurement ,” Optical Interference Coatings Topical Meeting by Optical Society of America 1992 Technical Digest Series, vol. 15, Jun. 1-5, 1992, pp 433-436.
Michel Luttmann, “Infrared Spectroscopic Ellipsometry Devoted to Thin Film Characterization,” Semiconductor Fabtech 6th Edition, May 1997, pp 387-391.
Dainippon Screen Mfg. Co,. Ltd.
McDermott Will & Emery LLP
Stafira Michael P.
LandOfFree
Method of measuring dielectric constant using light in a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of measuring dielectric constant using light in a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of measuring dielectric constant using light in a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3366970