Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Reexamination Certificate
2011-06-21
2011-06-21
Smith, Matthew S (Department: 2823)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Optical characteristic sensed
C438S017000, C356S030000, C356S301000
Reexamination Certificate
active
07964417
ABSTRACT:
A method of measuring a degree of crystallinity of a polycrystalline silicon substrate includes obtaining a Raman spectrum graph by irradiating a polycrystalline silicon substrate with a laser beam; and calculating a degree of crystallinity of the polycrystalline silicon substrate from the Raman spectrum graph using the following formula: (degree of crystallinity)=(area of polycrystalline peak)/[(area of amorphous peak)+(area of polycrystalline peak)].
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H.C. Park & Associates PLC
Parker John M
Samsung Mobile Display Co., Ltd.
Smith Matthew S
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