Semiconductor device manufacturing: process – Including control responsive to sensed condition – Electrical characteristic sensed
Reexamination Certificate
2005-08-09
2005-08-09
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Electrical characteristic sensed
C438S011000, C257SE21523, C257SE21525, C257SE21531
Reexamination Certificate
active
06927078
ABSTRACT:
A measuring method of the contact resistance of a probe includes bringing a plurality of probes including a first and second probes into contact with a plurality of electrode pads that is disposed on a semiconductor device to be electrically tested and connected each other with a conductive wiring; connecting a power supply to at least one predetermined first probe of the plurality of probes and supplying a current or a voltage from the first probe through the electrode pad and the wiring to the second probe to the semiconductor device; measuring the contact resistance between the electrode pad and the probe based on the current or the voltage supplied to the semiconductor device; judging whether the measured contact resistance is equal to or more than a predetermined value or not; and when the contact resistance is equal to or more than the predetermined value, the probes are cleansed.
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Kato Toshiaki
Saijyo Masakatsu
Fourson George
Garcia Joannie Adelle
Oki Electric Industry Co. Ltd.
Rabin & Berdo P.C.
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