Method of measuring contact resistance of probe and method...

Semiconductor device manufacturing: process – Including control responsive to sensed condition – Electrical characteristic sensed

Reexamination Certificate

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C438S011000, C257SE21523, C257SE21525, C257SE21531

Reexamination Certificate

active

06927078

ABSTRACT:
A measuring method of the contact resistance of a probe includes bringing a plurality of probes including a first and second probes into contact with a plurality of electrode pads that is disposed on a semiconductor device to be electrically tested and connected each other with a conductive wiring; connecting a power supply to at least one predetermined first probe of the plurality of probes and supplying a current or a voltage from the first probe through the electrode pad and the wiring to the second probe to the semiconductor device; measuring the contact resistance between the electrode pad and the probe based on the current or the voltage supplied to the semiconductor device; judging whether the measured contact resistance is equal to or more than a predetermined value or not; and when the contact resistance is equal to or more than the predetermined value, the probes are cleansed.

REFERENCES:
patent: 3881964 (1975-05-01), Cresswell et al.
patent: 4197632 (1980-04-01), Aomura
patent: 4440799 (1984-04-01), Faith, Jr.
patent: 6087895 (2000-07-01), Ono
patent: 6265245 (2001-07-01), Farnworth et al.
patent: 6320397 (2001-11-01), Wood et al.
patent: 09-275191 (1997-10-01), None
patent: 10-107104 (1998-04-01), None
patent: 10-209231 (1998-08-01), None

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