Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1997-05-23
1998-12-08
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438255, 438964, H01L 2120
Patent
active
058468706
ABSTRACT:
A method of measuring a semiconductor device in forming a capacitor by successively laminating a dielectric film and an opposed electrode above an upper face of a charge storing electrode a surface of which is formed in an irregular shaper, including the steps of forming the irregular shape of the charge storing electrode and measuring an area of the charge storing electrode which is to constitute an effective area of the capacitor by an atomic force microscope.
Ishida Tomoaki
Obara Ryo
Bowers Jr. Charles L.
Mitsubishi Denki & Kabushiki Kaisha
Thomas Toniae M.
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