Semiconductor device manufacturing: process – With measuring or testing
Patent
1998-05-26
2000-09-19
Dutton, Brian
Semiconductor device manufacturing: process
With measuring or testing
G01R 3126, H01L 2166
Patent
active
061210609
ABSTRACT:
A method of measuring the two-dimensional dopant concentration profile in a source/drain region included in a semiconductor device is disclosed. A semiconductor substrate is etched by an etchant of the kind etching a semiconductor by an amount dependent on a dopant concentration. The etched configuration of the substrate is filled with a filler, and then the filler is separated from the substrate and has its configuration measured. Dopant concentrations and therefore a dopant profile is produced from the configuration of the filler, or a replica of the substrate, measured on the basis of data representative of a relation between the dopant configuration and the amount of etching prepared beforehand. The method insures reliable measurement even in a high dopant concentration region.
REFERENCES:
patent: 5681987 (1997-10-01), Gamble
D. Venables et al., "Quantitative Two-Dimensional Dopant Profiles Obtained Directly from Secondary Electron Images", Workshop on the Measurements and Characterization of Ultra-Shallow Doping Profiles in Semiconductors, 1995, pp. 43-1--43-7.
C. Spinella et al., "Two-Dimensional Junction Profiling By Selective Chemical Etching: Applications to Electron Device Characterization", Workshpo on the Measurements and Characterization of Ultra-Shallow Doping Profiles in Semiconductors, pp. 42-1--42/8.
V. Raineri et al., "Carrier Distribution in Silicon Devices by Atomic Force Microscopy on Etched Surfaces", Appl. Phys. Letter, vol. 64, No. 3, Jan. 1994, pp. 354-356.
M. Barrett et al., "2-D Dopant Profiling in VLSI Devices Using Dopant-Selective Etching: And Atomic Force Microscopy Study", IEEE Electron Device Letters, vol. 16, No. 3, Mar. 1995, pp. 118-120.
W. Vandervorst et al., "On The Determination of Two-Dimensional Carrier Distributions", Nuclear Instruments and Methods in Physics Research B96, (1995), pp. 123-132.
Dutton Brian
NEC Corporation
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