Method of masking silicide deposition utilizing a photoresist ma

Details Method of masking silicide deposition utilizing a photoresist ma Method of masking silicide deposition utilizing a photoresist ma

1997-06-20

1999-06-29

Bowers, Charles

Semiconductor device manufacturing: process

Forming schottky junction

Using refractory group metal

438514, H01L 2128

Patent

active

059181419

ABSTRACT:
Problems with forming silicides on the surfaces of silicon structures using traditional oxide masks are overcome by utilizing a photoresist mask. Metal ions are selectively implanted at high dosage and low energy into unmasked surfaces of the silicon structures, where the metal ions react with the silicon to form the desired layer of metal silicide.

REFERENCES:
patent: 4742025 (1988-05-01), Ohyu et al.
patent: 4983536 (1991-01-01), Bulat et al.
patent: 5229307 (1993-07-01), Vora et al.
patent: 5290715 (1994-03-01), Pandya
patent: 5296386 (1994-03-01), Aronowitz et al.
patent: 5342798 (1994-08-01), Huang
patent: 5352631 (1994-10-01), Sitaram et al.
patent: 5354699 (1994-10-01), Ikeda et al.
patent: 5413969 (1995-05-01), Huang
patent: 5545581 (1996-08-01), Armacost et al.
patent: 5576244 (1996-11-01), Hayashi et al.
patent: 5654241 (1997-08-01), Kakumu
patent: 5731239 (1998-03-01), Wong et al.
patent: 5854101 (1998-12-01), Wu

Affiliated with

Also associated with

Rating

Method of masking silicide deposition utilizing a photoresist ma does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of masking silicide deposition utilizing a photoresist ma, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of masking silicide deposition utilizing a photoresist ma will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1386487