Method of marking a lateral mos controlled thyristor

Details Method of marking a lateral mos controlled thyristor Method of marking a lateral mos controlled thyristor

1992-02-18

1994-01-11

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

257153, H01L 4900

Patent

active

052780767

ABSTRACT:
A lateral MOS-controlled thyristor (MCT) structure using a single MOS gate for both turn-on and turn-off. By eliminating a parasitic lateral PNP transistor, through the addition of a high resistivity region surrounding one output terminal, and adding a DMOS transistor to a conventional thyristor structure, the maximum turn-off current limit is increased with lower forward voltage drop than that available in prior art lateral MCTs.

REFERENCES:
patent: 3919005 (1975-11-01), Schinelle et al.
patent: 4199774 (1980-04-01), Plummer
patent: 4250409 (1981-02-01), Davis et al.
patent: 4520277 (1985-05-01), Hahn
patent: 4550332 (1985-10-01), Wagner
patent: 4656366 (1987-04-01), Davis et al.
patent: 4698655 (1987-10-01), Schultz
patent: 4717940 (1988-01-01), Shinohe et al.
patent: 4742380 (1988-05-01), Chang et al.
patent: 4794441 (1988-12-01), Sugawara et al.
patent: 4816892 (1989-03-01), Temple
patent: 4861731 (1989-08-01), Bhagat
patent: 4896196 (1990-01-01), Blanchard et al.
patent: 4901132 (1990-02-01), Kuwano
patent: 4914496 (1990-04-01), Nakagawa et al.
patent: 4942440 (1990-07-01), Baliga et al.
patent: 5065212 (1991-11-01), Ohata et al.
patent: 5124773 (1992-06-01), Nakagawa et al.
"Insulated-Gate Planar Thyristors: I-Structure and Basic Operation", IEEE Transactions on Electricon Devices, vol. ED-27, No. 2, Feb. 1980, James D. Plummer, Brad W. Scharf, pp. 380 through 394.
"MCTs-thyristors for the future", Powertechnics Magazine, Nov. 1989, Dr. V. A. K. Temple, pp. 21 through 24.
"MOS-Controlled Thyristors-A New Class of Power Devices", IEEE Transactions on Electron Devices, vol. ED-33, No. 10, Oct. 1986, Victor A. K. Temple, pp. 1609 through 1618.
"MOS GTO-A Turn Off Thyristor With MOS-Controlled Emitter Shorts", IEDM 85, M. Stoisiek and H. Strack, Siemens AG Munich, FRG, pp. 158 through 161 (1985).
"A New Lateral MOS-controlled thyristor", IEEE Electron Device Letters, Darwish, vol. 11, No. 6, Jun. 1990, pp. 256-257.

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