Method of marginal erasure for the testing of flash memories

Details Method of marginal erasure for the testing of flash memories Method of marginal erasure for the testing of flash memories

2005-01-11

2005-01-11

Phan, Trong (Department: 2818)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185330

Reexamination Certificate

active

06842381

ABSTRACT:
Voltage-dropping components are bypassed during testing of the erasing of a flash memory device thereby effectively lowering the applied erase voltage to the marginal level desired (VME). These voltage-dropping components may be a plurality of diode-connected NMOS transistors. If a plurality of diode-connected NMOS transistors are used, the voltage applied to the flash macro is reduced by m*Vt, where m is the number of bypassed diode connected NMOS transistors and Vtis the threshold voltage of the NMOS transistors. In normal operation, the voltage dropping components are placed in series with the charge pump, thereby returning the voltage applied to the flash macro to the normal level (VNE).

REFERENCES:
patent: 4809231 (1989-02-01), Shannon et al.
patent: 4875188 (1989-10-01), Jungroth
patent: 4903265 (1990-02-01), Shannon et al.
patent: 5142495 (1992-08-01), Canepa
patent: 5297101 (1994-03-01), Tada et al.
patent: 5369616 (1994-11-01), Wells et al.
patent: 5455794 (1995-10-01), Javanifard et al.
patent: 5544116 (1996-08-01), Chao et al.
patent: 5675537 (1997-10-01), Bill et al.
patent: 5784315 (1998-07-01), Itoh
patent: 5870407 (1999-02-01), Hsia et al.
patent: 6002355 (1999-12-01), Del Signore et al.
patent: 6011723 (2000-01-01), Atsumi et al.
patent: 6122198 (2000-09-01), Haddad et al.
patent: 6236597 (2001-05-01), Sansbury
patent: 6249455 (2001-06-01), Kim
patent: 6370061 (2002-04-01), Yachareni et al.

Affiliated with

Also associated with

Rating

Method of marginal erasure for the testing of flash memories does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of marginal erasure for the testing of flash memories, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of marginal erasure for the testing of flash memories will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3398570