Method of manufacturing zinc chalcogenide semiconductor devices

Details Method of manufacturing zinc chalcogenide semiconductor devices Method of manufacturing zinc chalcogenide semiconductor devices

1989-10-13

1991-06-25

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG40, 148DIG41, 148DIG64, 148DIG110, 156613, 437 94, 437916, 437959, H01L 2120

Patent

active

050266616

ABSTRACT:
A method of growing zinc chalcogenide in an atmosphere which contains the vapor of di-.pi.-cyclopentadienyl manganese or di-.pi.-alkyl cyclopentadienyl manganese that serves as a source of manganese. By growing zinc chalcogenide in the above atmosphere, there is obtained a manganese-doped zinc chalcogenide having a very high crystal quality, which is very suitable for the active layer in light emitting devices.

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