Method of manufacturing x-ray mask blank and method of manufactu

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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378 35, G03F 900

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059897554

ABSTRACT:
Disclosed is a method comprising the step of checking a defect on a surface of a thin film formed by a step or steps of forming the thin film to be an x-ray membrane 12, wherein the thin film is formed by the thin film forming step or steps so that the thin film checked by the defect checking step may have a surface roughness of 1.0 nm or less in terms of Ra (center-line average roughness).

REFERENCES:
patent: 5005075 (1991-04-01), Kobayashi et al.
patent: 5178977 (1993-01-01), Yamada et al.
English language abstract: Japanese Laid-Open Patent No. 7-75219. Aug. 1995.
Yamaguchi, Y.I. et al, "Properties of Si.c. Film as X-Ray Mask Membrane," Materials Research Laboratory, Hoya Corporation, pp. 197-210.

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