Method of manufacturing X-ray mask and heating apparatus

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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378 35, G03F 900

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active

058341420

ABSTRACT:
The X-ray mask manufactured according to the present invention can solve a problem that the thin film stress of the X-ray absorber cannot be made to be zero although the mean thin film stress throughout the X-ray absorber can be made to be zero. The thin film stress distribution over the X-ray absorber 4 after the X-ray absorber 4 has been formed on a silicon substrate 1 is measured, and then inputs of electric power to heaters 9a, 9b and 9c of a hot plate 8 are changed so as to heat the X-ray absorber 4 to temperatures according to a specified temperature distribution with which the thin film stress throughout the X-ray absorber can be made to be zero.

REFERENCES:
patent: 4873162 (1989-10-01), Yoshioka et al.
patent: 5132186 (1992-07-01), Takeuchi et al.
patent: 5464711 (1995-11-01), Mogab et al.
patent: 5496667 (1996-03-01), Yabe et al.
patent: 5677090 (1997-10-01), Marumoto et al.
Kenji Marumoto, et. al., "Total Evaluation of W-Ti Abosorber X-ray Mask", SPIE vol.2194, pp. 221-230 (Feb. 1994).
T. Shoki, et. al., "Amorphous Structured Ta.sub.4 B Absorber on SiC Membrane for X-ray Mask", Digest of Papers Photomask, Japan '95, pp. 18-19 (Apr. 1995).
* Abstract and Summary Only.
Kenji Marumoto, et. al., "A Strategy For Highly Accurate X-ray Masks", Digest of Papers XEL'95, pp. M 6-2-1/2(Apr. 1995).

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