Method of manufacturing X-ray exposure mask

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430321, 378 34, 378 35, 437107, G03F 900

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053647173

ABSTRACT:
The present invention relates to a method of manufacturing an exposure mask having an unprecedented supermicrostructure for an X-ray exposure method favorable for conventional supermicro exposure using lithography techniques. The method of manufacturing an X-ray exposure mask comprises the steps of alternately laminating two kinds of compound semiconductors as a thin film having a periodic structure with controllability of about one atomic layer on a substrate selectively etching only one material for forming the periodic structure, forming an uneven difference between adjacent layers of the laminate body, and manufacturing a mask for exposing streaks on a desired resist with the aid of a difference of X-rays absorption amounts between each layer by exposing X-ray in parallel to the direction of the laminate layer.

REFERENCES:
patent: 5051326 (1991-09-01), Celler et al.
"Fabrication of Ultrafine X-Ray Mask Using Precise Crystal Growth Technique", Miyamoto et al., Japan Jour. of Applied Physics, vol. 31, No. 4A, pp. L432-L435. 1 Apr. 1992.
"An X-Ray Mask Using TA and Heteroepitaxially Grown SIC", Yamada et al., 8226 Microelectronic Engineering 9(1989) May, Nos. 1-4, Amsterdam, NL, pp. 135-138.

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