Method of manufacturing X-ray exposure mask

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430269, 430311, 430321, 430396, 378 35, 437107, G03F 900

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active

054360960

ABSTRACT:
The present invention can precisely manufacture an X-ray mask pattern at intervals of less than 10 nm by using a thin film crystalline growth method, applying a laminated layer body of a fine structure having a precision of less than 1 atomic layer onto a substrate, and utilizing the difference in X-ray absorption coefficients. A method of manufacturing an X-ray exposure mask comprises the steps of alternately laminating two kinds of material consisting of a combination of a semiconductor, metal and insulator having substantially equal lattice constants and largely different coefficients of X-ray absorption on a substrate of a crystal body to thicknesses of less than 10 .ANG. by an epitaxial crystal growth method, and manufacturing a mask for exposing streak-like X-rays on a desired resist as a result of the largely different coefficients of X-ray absorption between each layer.

REFERENCES:
patent: 4806442 (1989-02-01), Shirasaki
Jpn. J. Appl. Phys. vol. 31 (1992) pp. L432-L435; Miyamoto et al. "Fabrication of Ultrafine X-Ray Mask Using Precise Crystal Growth Technique" Apr. 1, 1992.
Appln. Phys. Lett., 36(1), Jan. 1, 1980, American Institute of Physics, pp. 93-96, "Replication of 175-A Lines and Spaces in Polymethylmethacrylate Using X-ray Lithography", D. C. Flanders.

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