Method of manufacturing wiring structure of a power...

Details Method of manufacturing wiring structure of a power... Method of manufacturing wiring structure of a power...

2005-01-11

2005-01-11

Elms, Richard (Department: 2824)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Metallic housing or support

C438S123000, C257S784000

Reexamination Certificate

active

06841421

ABSTRACT:
A semiconductor device includes a power supply semiconductor chip that has a plurality of current passing electrodes. Conductive plates are disposed on the current electrodes, and conductive wires used for an external connection of the device are fixed on the conductive plates, but not directly on the current passing electrode. A large plate is first fixed on the semiconductor chip, and then the back surface of the large plate is removed to form the individual conductive plates. Because the conductive wires are soldered onto the conductive plates, the semiconductor chip does not receive impact of wire bonding. Even when the conductive wires are wire bonded to the conductive plates, the plates may serve as shock absorbers during wire bonding procedure to reduce the impact of the wire bonding.

REFERENCES:
patent: 5115300 (1992-05-01), Yanagida et al.
patent: 5986218 (1999-11-01), Muto et al.
patent: 6051862 (2000-04-01), Grimaldi et al.
patent: 6055148 (2000-04-01), Grover
patent: 6198160 (2001-03-01), Yamaguchi

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