Method of manufacturing wafer bonded semiconductor laser device

Details Method of manufacturing wafer bonded semiconductor laser device Method of manufacturing wafer bonded semiconductor laser device

1996-12-16

1998-12-29

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438 46, H01L 2120, H01L 21306

Patent

active

058540903

ABSTRACT:
This invention gives birth to a semiconductor laser device which is equipped with a semiconductor substrate, a laser active layer with a first bandgap energy overlying the preceding semiconductor substrate, and a p-type cladding layer and an n-type cladding layer between which the preceding active layer is interposed. In addition, the referenced p-type cladding layer has a second bandgap energy exceeding 1.35 eV and remaining greater than the first bandgap energy. Direct bonding technique is adopted for fabricating the semiconductor laser device in question in place of epitaxial growth technique, because the cladding layer and active layer differ in lattice constant.

REFERENCES:
patent: 5207864 (1993-05-01), Bhat et al.
patent: 5376580 (1994-12-01), Kish et al.
patent: 5724376 (1998-03-01), Kish et al.

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