Method of manufacturing vertical light emitting diode

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE21090

Reexamination Certificate

active

07838315

ABSTRACT:
Provided is a method of manufacturing a vertical LED, the method including the steps of: preparing a sapphire substrate; forming a light emitting structure in which an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer are sequentially laminated on the sapphire substrate; forming a p-electrode on the p-type nitride semiconductor layer; forming a structure support layer on the p-electrode; removing the sapphire substrate through an LLO (laser lift-off) process; isolating the light emitting structure into unit LED elements through an ISO (isolation) process; and forming an n-electrode on each of the n-type nitride semiconductor layers of the isolated light emitting structures.

REFERENCES:
patent: 6818531 (2004-11-01), Yoo et al.
patent: 2005/0173692 (2005-08-01), Park et al.
patent: 2007/0042520 (2007-02-01), Oh et al.
patent: 10-0706952 (2007-04-01), None
patent: WO 2006043796 (2006-04-01), None
Korean Office Action issued in Korean Patent Application No. KR 10-2007-0120260, dated Feb. 26, 2009.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing vertical light emitting diode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing vertical light emitting diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing vertical light emitting diode will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4161017

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.