Method of manufacturing vertical light emitting diode

Details Method of manufacturing vertical light emitting diode Method of manufacturing vertical light emitting diode

2008-06-02

2010-11-23

Dickey, Thomas L (Department: 2893)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C257SE21090

Reexamination Certificate

active

07838315

ABSTRACT:
Provided is a method of manufacturing a vertical LED, the method including the steps of: preparing a sapphire substrate; forming a light emitting structure in which an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer are sequentially laminated on the sapphire substrate; forming a p-electrode on the p-type nitride semiconductor layer; forming a structure support layer on the p-electrode; removing the sapphire substrate through an LLO (laser lift-off) process; isolating the light emitting structure into unit LED elements through an ISO (isolation) process; and forming an n-electrode on each of the n-type nitride semiconductor layers of the isolated light emitting structures.

REFERENCES:
patent: 6818531 (2004-11-01), Yoo et al.
patent: 2005/0173692 (2005-08-01), Park et al.
patent: 2007/0042520 (2007-02-01), Oh et al.
patent: 10-0706952 (2007-04-01), None
patent: WO 2006043796 (2006-04-01), None
Korean Office Action issued in Korean Patent Application No. KR 10-2007-0120260, dated Feb. 26, 2009.

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