Method of manufacturing vertical complementary bipolar transisto

Details Method of manufacturing vertical complementary bipolar transisto Method of manufacturing vertical complementary bipolar transisto

1974-01-31

1976-05-25

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29577, 29578, 29580, 148187, 307315, 357 44, 357 46, 357 56, H01L 2120, H01L 2906, H01L 2704

Patent

active

039590399

ABSTRACT:
A device having complementary transistors and method of manufacturing same.
A monolithic device which comprises at least two transistors of opposite conductivity types.
The device is provided on a substrate which is covered with an epitaxial region of the opposite conductivity type and in this region the base of a transistor is formed by a localized epitaxial layer which is present above the said region, the collector of the said transistor and the base of the other transistor adjoining each other in said region.
Amplifiers of the Darlington type FIG. 4.

REFERENCES:
patent: 3328652 (1967-06-01), Sylvan
patent: 3370995 (1968-02-01), Lowery et al.
patent: 3404450 (1968-10-01), Karcher
patent: 3411052 (1968-11-01), Lauffer et al.
patent: 3434022 (1969-03-01), Byrd
patent: 3460006 (1969-08-01), Strull
patent: 3524113 (1970-08-01), Agusta et al.

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