Method of manufacturing vertical cavity surface emitting semicon

Details Method of manufacturing vertical cavity surface emitting semicon Method of manufacturing vertical cavity surface emitting semicon

1997-12-15

1999-06-22

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438 46, 438960, 372 45, 372 46, H01S 318

Patent

active

059151650

ABSTRACT:
The present invention relates to a vertical cavity surface emitting laser with an accurately defined and controlled aperture which directs the current path within the laser. Specifically, the oxide regions surrounding the aperture are formed by a pre-oxidation layer disordering process which controls the regions within which oxidation can occur. The present invention allows for the manufacture of highly compact lasers with reproducible optical and electrical characteristics.

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