Method of manufacturing VCSEL arrays using vapor phase epitaxy t

Details Method of manufacturing VCSEL arrays using vapor phase epitaxy t Method of manufacturing VCSEL arrays using vapor phase epitaxy t

1996-02-16

1999-11-02

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Ordered or disordered

438 47, H01L 2906, H01L 3922, H01L 2940

Patent

active

059769050

ABSTRACT:
An array of infrared vertical cavity surface-emitting lasers (VCSELs) and method of manufacturing the same is disclosed which reduces device-to-device non-uniformity for VCSEL arrays manufactured using well-known vapor phase epitaxial processes. The method involves growing layers comprising a standard infrared VCSEL array using a vapor phase epitaxial process on a substrate which is mosoriented from the (100) plane in the {111}A direction by preferably between eight and twelve degrees or more.

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Gerald B. Stringfellow, "Organometallic Vapor-Phase Epitaxy: Theory and Practice", Academic Press, Inc (London) Ltd., pp. 204-212, 1989.

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