Method of manufacturing trench structure for device

Details Method of manufacturing trench structure for device Method of manufacturing trench structure for device

2007-02-13

2007-02-13

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S756000, C438S757000

Reexamination Certificate

active

10455344

ABSTRACT:
A porous low-k film, a sacrificial film that can be dissolved in a pure water, an antireflection film and a resist film are successively formed on a dielectric film on a wafer and subsequently exposing the resist film to light in a prescribed pattern and developing the resist film so as to form a prescribed circuit pattern in the resist film. Then, the wafer W is etched so as to form a via hole in the porous low-k film, followed by processing the wafer with a hydrogen peroxide solution so as to denature the resist film. Further, the sacrificial film is dissolved in a pure water so as to strip the resist film and the antireflection film from the water. As a result, a via hole excellent in the accuracy of the shape is formed without doing damage to the dielectric film.

REFERENCES:
patent: 5464480 (1995-11-01), Matthews
patent: 6030541 (2000-02-01), Adkisson et al.
patent: 6083835 (2000-07-01), Shue et al.
patent: 6245155 (2001-06-01), Leon et al.
patent: 6383923 (2002-05-01), Brown et al.
patent: 6514880 (2003-02-01), Matsuki et al.
patent: 6517998 (2003-02-01), Noda et al.
patent: 6616773 (2003-09-01), Kuzumoto et al.
patent: 6815329 (2004-11-01), Babich et al.
patent: 2003/0162408 (2003-08-01), Matsuki et al.
patent: 2004/0038514 (2004-02-01), Hyodo et al.

Affiliated with

Also associated with

Rating

Method of manufacturing trench structure for device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing trench structure for device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing trench structure for device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3892104