Method of manufacturing trench isolation

Details Method of manufacturing trench isolation Method of manufacturing trench isolation

1993-06-18

1995-02-07

Fourson, George

Fishing, trapping, and vermin destroying

437228, H01L 21302, H01L 2176

Patent

active

053875397

ABSTRACT:
A method of manufacturing a trench isolation comprising the steps of sequentially forming a first oxide layer a nitride layer and a first photoresist layer, forming a narrow trench and a wide trench, forming a first thermal oxide layer in the side and bottom face of trenches, forming a second oxide layer, depositing a first polysilicon oxide layer filling in the narrow trench by growing the first polysilicon layer growing into a second silicon layer, forming a third oxide layer, coating a second photoresist on the wide trench, and etching a third oxide layer. The present invention can provide a method of manufacturing a trench isolation which can prevent formation of voids in the narrow trench and the difference of height between narrow trench and wide trench, thereby preventing a conducting line short circuit and an increase of parasitic capacitance and a fall of the characteristic of the MOS transistor.

REFERENCES:
patent: 5190889 (1994-02-01), Poon et al.

Affiliated with

Also associated with

Rating

Method of manufacturing trench isolation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing trench isolation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing trench isolation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1110050