Method of manufacturing transistors by means of ion implantation

Details Method of manufacturing transistors by means of ion implantation Method of manufacturing transistors by means of ion implantation

1977-02-10

1978-08-15

Dean, R.

Metal treatment

Compositions

Heat treating

357 34, 357 91, H01L 21265

Patent

active

041069544

ABSTRACT:
A method of manufacturing transistors by means of ion implantation is characterized by the implantation of a uniform extrinsic base zone, by providinbg a mask having at least two windows, and by the implantation of the emitter zone and then of the intrinsic active base zone via a first window, after which the implanted zones are annealed.

REFERENCES:
patent: 3595716 (1971-07-01), Kerr et al.
patent: 3730778 (1973-05-01), Shannon et al.
patent: 3852119 (1974-12-01), Gosney et al.
patent: 4025364 (1977-05-01), Smith
R. S. Payne et al., "Fully Ion-Implanted Bipolar Transistors", I.E.E.E. Trans. on Electronic Devices, 21, (1974), 273.
M. K. Barnoski et al., "Microwave . . . of Ion-Implanted Bipolar Transistors", Solid St. Electronics, 16, (1973), 441.
J. A. Archer, "Low-Noise Implanted-Base Microwave Transistors" Solid St. Electronics, 17, (1974), 387.
F. F. Fang et al., "Forming Double Diffused Regions" IBM Tech. Discl. Bull. 14, (1972) 3363.

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