Method of manufacturing transistor that utilizes current...

Details Method of manufacturing transistor that utilizes current... Method of manufacturing transistor that utilizes current...

2008-07-10

2009-12-29

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Having metal oxide or copper sulfide compound semiconductor...

C438S237000, C438S238000, C438S385000, C257SE21040

Reexamination Certificate

active

07638361

ABSTRACT:
A transistor in which a physical property of its channel is changed according to an applied voltage, and methods of manufacturing and operating the same are provided. The transistor may include a first conductive layer on a substrate, a phase change layer and a second conductive layer which are sequentially stacked on the first conductive layer, a first current direction limiting unit and a second current direction limiting unit formed on the second conductive layer by being separated within a space, a third conductive layer and a fourth conductive layer formed on the first current direction limiting unit and the second current direction limiting unit, respectively, a word line connected to the third conductive layer, a bit line connected to the fourth conductive layer, and a voltage lowering unit connected to the word line.

REFERENCES:
patent: 5070383 (1991-12-01), Sinar et al.
patent: 2004/0202041 (2004-10-01), Hidenori
patent: 2006/0034116 (2006-02-01), Lam et al.
patent: 2006/0250837 (2006-11-01), Herner et al.
patent: 2007/0096248 (2007-05-01), Philipp et al.
patent: 2003-174087 (2003-06-01), None

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