Method of manufacturing thin film transistors in a liquid crysta

Details Method of manufacturing thin film transistors in a liquid crysta Method of manufacturing thin film transistors in a liquid crysta

1995-01-05

1996-05-21

Thomas, Tom

Fishing, trapping, and vermin destroying

437 21, 437 44, 437170, 437229, 204485, 204487, H01L 218232

Patent

active

055189407

ABSTRACT:
A method of manufacturing a semiconductor device according to the present invention includes a process of introducing impurities into a semiconductor layer with a gate electrode and a resist film as a mask after a resist film is formed on the top and the side of the gate electrode by soaking the gate electrode on a semiconductor layer in an electrolyte containing resist and applying voltage to the gate electrode.

REFERENCES:
patent: 3954587 (1976-05-01), Kokawa
patent: 4592816 (1986-06-01), Emmons et al.
patent: 4786609 (1988-11-01), Chen
patent: 4837173 (1989-06-01), Aluis et al.
patent: 4965213 (1990-10-01), Blake
patent: 5158657 (1992-10-01), Kadokuna
patent: 5399449 (1995-03-01), Tanimoto et al.

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