Method of manufacturing thin film transistors in a liquid crysta

Details Method of manufacturing thin film transistors in a liquid crysta Method of manufacturing thin film transistors in a liquid crysta

1994-12-30

1995-10-31

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 21, 437 51, 437229, 148DIG150, H01L 21786

Patent

active

054628857

ABSTRACT:
A first sheet of photomask is used when a gate electrode and a gate bus line are formed, a second sheet of photomask is used when patterning is applied to a semiconductor film which becomes an active layer of a transistor on the gate electrode, a third sheet of photomask is used when a pixel electrode, a source electrode, a drain electrode, a drain bus line and a drain bus terminal portion are formed, and a fourth sheet of photomask is used when a film on the drain bus terminal portion, the gate bus terminal portion and pixel portion is removed, thereby to form thin film transistors arranged in a matrix form.

REFERENCES:
patent: 4393572 (1983-07-01), Policastro et al.
patent: 5053345 (1991-10-01), Schnable et al.
patent: 5198379 (1993-03-01), Adan
patent: 5346839 (1994-09-01), Sundaresan
F. Funada et al., SID 1986 DIGEST pp. 293-295, "An Amorphous-SiTF Addressed 3.2 in. Full-Color LCD".

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