Method of manufacturing thin film transistors in a liquid crysta

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 21, 437 51, 437229, H01L 21786

Patent

active

054967490

ABSTRACT:
A first sheet of photomask is used when a gate electrode and a gate bus line are formed, a second sheet of photomask is used when patterning is applied to a semiconductor film which becomes an active layer of a transistor on the gate electrode, a third sheet of photomask is used when a pixel electrode, a source electrode, a drain electrode, a drain bus line and a drain bus terminal portion are formed, and a fourth sheet of photomask is used when a film on the drain bus terminal portion, the gate bus terminal .portion and pixel portion is removed, thereby to form thin film transistors arranged in a matrix form.

REFERENCES:
patent: 4393572 (1983-07-01), Policastro et al.
patent: 4902638 (1990-02-01), Muto
patent: 4990460 (1991-02-01), Moriyama
patent: 5053345 (1991-10-01), Schnable et al.
patent: 5166086 (1992-11-01), Takeda et al.
patent: 5188974 (1993-02-01), Mochizuki
patent: 5231039 (1993-07-01), Sakono et al.
patent: 5346839 (1994-09-01), Sundaresan
F. Funada et al., SID 1986 DIGEST pp. 293-295, "An Amorphous--SiTF Addressed 3.2 in. Full-Color LCD".

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing thin film transistors in a liquid crysta does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing thin film transistors in a liquid crysta, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing thin film transistors in a liquid crysta will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1412628

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.