Method of manufacturing thin film transistors and transistors ma

Details Method of manufacturing thin film transistors and transistors ma Method of manufacturing thin film transistors and transistors ma

1983-08-15

1985-10-08

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29577C, 148 15, 357 4, 357 237, H01L 2978, H01L 2702

Patent

active

045451125

ABSTRACT:
An improved method of manufacturing thin film transistors. A gate metal is patterned to form a gate electrode and a drain, gate and source contact pad for the transistor. To reduce shorts and capacitance between the gate and the source or the drain, an intermetal dielectric is patterned to form a central portion over a planar portion of the gate region and to cover any exposed gate edges.

REFERENCES:
patent: 3852795 (1974-12-01), Ames
patent: 4282543 (1981-08-01), Ihara et al.
patent: 4415606 (1983-11-01), Cynkan et al.
patent: 4436582 (1984-03-01), Saxena
patent: 4459739 (1982-07-01), Shepherd et al.

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