Method of manufacturing thin film transistors and transistors ma

Details Method of manufacturing thin film transistors and transistors ma Method of manufacturing thin film transistors and transistors ma

1985-04-15

1987-03-17

Edlow, Martin H.

357 4, 357 236, 357 30, 357 71, 357 239, 350334, H01L 2978

Patent

active

046511857

ABSTRACT:
An improved method of manufacturing thin film transistors. A gate metal is patterned to form a gate electrode and a drain, gate and source contact pad for the transistor. To reduce shorts and capacitance between the gate and the source or the drain, a dielectric is patterned to form a central portion over a planar portion of the gate region and to cover any exposed gate edges.

REFERENCES:
patent: 3675090 (1972-07-01), Neale
patent: 3852795 (1974-12-01), Ames
patent: 4282543 (1981-08-01), Ihara
patent: 4364779 (1982-12-01), Kamgar
patent: 4404578 (1983-09-01), Takafuji
patent: 4415606 (1983-11-01), Cynkar
patent: 4425572 (1984-01-01), Takafuji
patent: 4433342 (1984-02-01), Potel
patent: 4436582 (1984-03-01), Saxena
patent: 4459739 (1984-07-01), Shepherd
Fang, IBM Tech. Discl. Bull., vol. 12, No. 12, May 1978.
Brodsky et al., IBM Tech. Discl. Bull., vol. 20, No. 9, Feb. 1978.
Adamcik et al., Telsa Electronics, No. 10, No. 4, (Dec. 1971), p. 109.
Kramer, Proceed. of the S.I.D., vol. 16/3, (3rd Quarter 1975), pp. 152-155.

Affiliated with

Also associated with

Rating

Method of manufacturing thin film transistors and transistors ma does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing thin film transistors and transistors ma, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing thin film transistors and transistors ma will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1791199