Fishing – trapping – and vermin destroying
Patent
1995-11-20
1997-09-23
Chaudhari, Chandra
Fishing, trapping, and vermin destroying
437191, 437203, H01L 21265
Patent
active
056703988
ABSTRACT:
This invention provides a method for manufacturing a thin film transistor which comprised the steps of providing an oxide layer; etching a portion of the oxide layer so that a recess is formed; forming a first channel layer on the resulting structure; forming a first gate oxide layer on the first channel layer in a portion including the recess region; forming a polysilicon layer on the resulting structure, filling in the recess region; etching back the polysilicon layer until the surface of a portion of the first gate oxide layer, leaving the residual layer on the first channel layer, which is exposed by the first gate oxide layer, wherein the surface of the resulting structure has uniform topology by the etching process; forming a second gate oxide layer on the polysilicon layer; forming a second channel layer on the resulting structure; and implanting impurity ions for forming source/drain regions, whereby the source/drain region consists of multi-layers, the first channel layer, the second polysilicon layer and the second channel layer.
REFERENCES:
patent: 5298782 (1994-03-01), Sundaresan
patent: 5348899 (1994-09-01), Dennison et al.
patent: 5362669 (1994-11-01), Boyd et al.
patent: 5372959 (1994-12-01), Chan
Kim Yun Ki
Yin Sung Wook
Chaudhari Chandra
Hyundai Electronics Industries Co,. Ltd.
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