Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Patent
1996-07-22
1998-11-03
Niebling, John
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
438151, 438585, H01L 2184
Patent
active
058307761
ABSTRACT:
A terminal section for anodic oxidation made of a metal which is the same kind of a metal as a light shielding film is formed on an end of a light transmitting substrate. Then, wiring space for the terminal section for anodic oxidation is masked, and a first insulating film, a semiconductor layer and a second insulating film are deposited by the sputtering method or the CVD method, for example. Moreover, an electrically conductive material to be a gate electrode is laminated and patterned on the second insulating film and the terminal section for anodic oxidation so that the wiring space for the terminal section for anodic oxidation is exposed. As a result, the gate electrode which is electrically connected to the terminal section for anodic oxidation is formed. By making wiring in the wiring space for the terminal section for anodic oxidation, the gate electrode is anodically oxidized. With the above method, only the wiring space for the terminal section for anodic oxidation is easily exposed, and the terminal section for anodic oxidation can be electrically connected to the gate electrode. Therefore, with the above method, a number of the processes can be decreased, the process for anodic oxidation can be simplified and cost of production can be reduced. Moreover, a thin film transistor with high reliability can be provided.
REFERENCES:
patent: 4960719 (1990-10-01), Tanaka et al.
patent: 5032531 (1991-07-01), Tsutsui et al.
patent: 5585290 (1996-12-01), Yamamoto et al.
patent: 5605847 (1997-02-01), Zhang
patent: 5614427 (1997-03-01), Den Boer et al.
patent: 5633182 (1997-05-01), Miyawaki et al.
Kurogane Saori
Sakamoto Hiromi
Booth Richard A.
Niebling John
Sharp Kabushiki Kaisha
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