Method of manufacturing thin film conductor which contains silic

Details Method of manufacturing thin film conductor which contains silic Method of manufacturing thin film conductor which contains silic

1987-06-30

1988-08-23

Pianalto, Bernard D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 40, 427 541, 427295, 427296, B05D 306

Patent

active

047660082

ABSTRACT:
The invention relates to a thin film conductor which has a composition containing silicon and germanium as major components and has a structure in which both amorphous and microcrystalline phases are present, and a method of manufacturing the same by a CVD method. The resultant thin film conductor has characteristics, such as a high dark conductivity, a large gauge factor, a small temperature coefficient of the dark conductivity, a large thermoelectric power, and the like, and is used as a material for microelectronic devices having a sensor function.

REFERENCES:
patent: 3771026 (1973-11-01), Asai et al.
patent: 4344984 (1982-08-01), Kaplan et al.
patent: 4398343 (1983-08-01), Yamazaki
patent: 4409134 (1983-10-01), Yamazaki
patent: 4435445 (1984-03-01), Allred et al.
patent: 4498092 (1985-02-01), Yamazaki
patent: 4532150 (1985-07-01), Endo et al.

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