Method of manufacturing thin film capacitor

Semiconductor device manufacturing: process – Making passive device – Planar capacitor

Reexamination Certificate

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C438S250000, C438S396000, C257SE21008

Reexamination Certificate

active

10974747

ABSTRACT:
A thin film capacitor comprising an insulating substrate, a capacitor structure located on the substrate, the capacitor structure having a dielectric layer sandwiched between a lower electrode layer and an upper electrode layer, and conductor members respectively connected to the lower electrode layer and the upper electrode layer, wherein at least the dielectric layer has a side face having a sufficient slope for preventing the short circuit of the upper electrode layer with the lower electrode layer through the conductor member. A method of manufacturing such a thin film capacitor is also disclosed.

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patent: 6599757 (2003-07-01), Murai
patent: 6617666 (2003-09-01), Yoshitomi et al.
patent: 6720608 (2004-04-01), Lee
patent: 6747334 (2004-06-01), Kitagawa et al.

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