Semiconductor device manufacturing: process – Making passive device – Planar capacitor
Reexamination Certificate
2007-02-06
2007-02-06
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Making passive device
Planar capacitor
C438S250000, C438S396000, C257SE21008
Reexamination Certificate
active
10974747
ABSTRACT:
A thin film capacitor comprising an insulating substrate, a capacitor structure located on the substrate, the capacitor structure having a dielectric layer sandwiched between a lower electrode layer and an upper electrode layer, and conductor members respectively connected to the lower electrode layer and the upper electrode layer, wherein at least the dielectric layer has a side face having a sufficient slope for preventing the short circuit of the upper electrode layer with the lower electrode layer through the conductor member. A method of manufacturing such a thin film capacitor is also disclosed.
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Baniecki John David
Kurihara Kazuaki
Shioga Takeshi
Fujitsu Limited
Perkins Pamela E
Smith Zandra V.
Westerman, Hattori, Daniels & Adrian , LLP.
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