Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1987-07-23
1989-12-19
Bueker, Richard
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
427 38, 4272552, 4272553, 156610, 156612, 156614, C23C 1424, C23C 1448
Patent
active
048882020
ABSTRACT:
In a method of manufacturing a thin film of a compound oxide, different types of materials for forming the compound oxide are evaporated in vacuum. The evaporated materials are heated and deposited on a substrate to form a thin film. An oxygen ion beam having energy of 10 to 200 eV is implanted in the thin film which is being formed on the substrate. Alignment of the constituting elements is performed on the basis of a substrate temperature and energy of the oxygen ion beam, thereby causing epitaxial growth.
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Bunshah et al., Deposition Technologies for Films & Coatings, (Noyes, Park Ridge, N.J.) c. 1982, pp. 92-93.
Vossen et al., ("Harper"), Thin Film Processes, (Academic Press, NY) c. 1978, p. 186.
Applied Optics; vol. 22, No. 1; Jan. 1, 1983 "Ion-Beam-Assisted Deposition of Thin Films".
Journal of Materials Science 21 (1986) pp. 1-25, "Review Ion-Based Methods for Optical Thin Film Deposition".
G. Dearnaley, et al., Ion Implantation, North-Holland Publishing Co., New York, 1973 (cover page only).
John R. McNeil et al., Ion-Assisted Deposition of Optical Thin Films: Low Energy vs High Energy Hombardment, in Applied Optics, vol. 23, No. 4, Feb. 15, 1984.
M. Kawabe et al., Effects of Ion Etching on the Properties of GaAs, in Applied Optics, vol. 17, No. 16, Aug. 15, 1978.
Shigeyuki Ishii et al., Optimization of Plasma for ECR-type Ion Source.
Moriwaki Kazuyuki
Murakami Toshiaki
Bueker Richard
Nippon Telegraph and Telephone Corporation
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