Coating apparatus – Gas or vapor deposition – With treating means
Patent
1989-08-29
1991-05-21
Morgenstern, Norman
Coating apparatus
Gas or vapor deposition
With treating means
118725, 118726, 156613, 156614, C23C 1408, C23C 1448, C23C 1454
Patent
active
050165631
ABSTRACT:
In a method of manufacturing a thin film of a compound oxide, different types of materials for forming the compound oxide are evaporated in vacuum. The evaporated materials are heated and deposited on a substrate to form a thin film. An oxygen ion beam having energy of 10 to 200 eV is implanted in the thin film which is being formed on the substrate. Alignment of the constituting elements is performed on the basis of a substrate temperature and energy of the oxygen ion beam, thereby causing epitaxial growth.
REFERENCES:
patent: 4314874 (1982-02-01), Abe et al.
patent: 4333226 (1982-06-01), Abe et al.
patent: 4351712 (1982-09-01), Cuomo et al.
patent: 4634600 (1987-01-01), Shimizu et al.
patent: 4855013 (1989-08-01), Ohta et al.
patent: 4861750 (1989-08-01), Nogawa et al.
Vossen, Harper et al., Thin Film Processes (Academic Press, N.Y.), C. 1978, pp. 175-205.
P. J. Martin, "Review Ion-Based Methods for Optical Thin Film Deposition", Journal of Materials Science, vol. 21, 1986 (London), pp. 1-25, especially pp. 10-11.
P. J. Martin et al., "Ion Beam-Assisted Deposition of Thin Films", Applied Optics, vol. 22, No. 1, 1983 (New York), pp. 178-184.
G. Dearnaley et al., Ion Implantation, North Holland Publishing Co., New York, 1973 (cover page only).
John R. McNeil et al, Ion-Assisted Deposition of Optical Thin Films: Low Energy vs High Energy Bombardment, Applied Optics, vol. 23, No. 4, 2/15/84, pp. 552-559.
M. Kawabe et al., Effects of Ion Etching on the Properties of GaAs, Applied Optics, vol. 17, No. 16, 8/15/78, pp. 2556-2561.
Shigeyuki Ishii et al., Optimization of Plasma for ECR-Type Ion Source, pp. 125-128.
Bunshah et al., Deposition Technologies for Films and Coatings (Noyes Publications, Park Ridge, N.J.), C. 1982, pp. 92-93.
Moriwaki Kazuyuki
Murakami Toshiaki
Bueker Margaret
Morgenstern Norman
Nippon Telegraph and Telephone Corporation
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