Method of manufacturing thin amorphous silicon film

Details Method of manufacturing thin amorphous silicon film Method of manufacturing thin amorphous silicon film

1985-07-26

1986-12-23

Pianalto, Bernard D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 74, B05D 306

Patent

active

046311980

ABSTRACT:
A method of manufacturing thin amorphous silicon hydride film is disclosed by using a plasma CVD process. The method comprises the steps of providing a substrate for supporting the amorphous silicon hydride film, providing raw material gas produced by mixing hydrogen silicide Si.sub.n H.sub.2n+2 (n.gtoreq.1) with additive gas in the concentration from about 0.1 to 10 parts per million by volume, setting a gas flow rate of the raw material gas in the range from about 200 to about 700 SCCM, applying radio frequency electric power to said gas in plasma CVD apparatus, said power being selected in the range from about 300 W to about 700 W to result in a ratio of electric power in watts to gas flow rate in SCCM of at least about 1, and growing thin amorphous silicon hydride film on the substrate from the raw material gas.

REFERENCES:
patent: 4568626 (1986-02-01), Ogawa

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