Method of manufacturing the substrate of GaAs compound semicondu

Details Method of manufacturing the substrate of GaAs compound semicondu Method of manufacturing the substrate of GaAs compound semicondu

1988-08-09

1989-12-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437247, 437248, 437939, C30B 1500, C30B 3300, H01L 21265

Patent

active

048894931

ABSTRACT:
A method of manufacturing a substrate of a GaAs compound semiconductor is disclosed, which is characterized in that, after a crystal of GaAs compound semiconductor obtained by the liquid encapsulated Czocharalski method is annealed in the form of ingot, gradually cooled to room temperature and cut off in the form of a wafer, a re-heating treatment consisting of heating to a temperature of not lower than 700.degree. C., rapid cooling from the temperature of not lower than 700.degree. C. to a temperature of not higher than 400.degree. C. within 30 minutes and successive cooling to room temperature is given to the wafer, and then mirror polishing is performed.

REFERENCES:
patent: 3620850 (1971-11-01), Deal et al.
patent: 3729348 (1973-04-01), Saul
patent: 3737282 (1973-06-01), Hearn et al.
patent: 4344815 (1982-08-01), Cazarra et al.
patent: 4636280 (1987-01-01), Nakai et al.
patent: 4713354 (1987-12-01), Egawa et al.
patent: 4752592 (1988-06-01), Tamusa et al.

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