Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-08-01
2008-10-07
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S680000, C438S311000, C257SE21170, C257SE21006, C257SE21218, C257SE21229, C257SE21226, C257SE21320, C257SE21293
Reexamination Certificate
active
07432208
ABSTRACT:
A method of manufacturing a suspension structure including providing a substrate, forming a first photoresist pattern on the substrate, heating the first photoresist pattern to harden it as a sacrificial layer, forming a second photoresist pattern on the substrate and the sacrificial layer, the second photoresist pattern exposing a part of the substrate and the sacrificial layer, forming a structure layer on the substrate, the second photoresist pattern, and the sacrificial layer, performing a lift off process to remove the second photoresist pattern and the structure layer above the second photoresist pattern, and performing a dry etching process to remove the sacrificial layer in order to make the structure layer become the suspension structure.
REFERENCES:
patent: 5071510 (1991-12-01), Findler et al.
patent: 5985693 (1999-11-01), Leedy
patent: 6428713 (2002-08-01), Christenson
patent: 2007/0293023 (2007-12-01), Kang et al.
patent: 2007/0298581 (2007-12-01), Kang
patent: 1483660 (2004-03-01), None
patent: 584892 (2004-04-01), None
patent: 587059 (2004-05-01), None
Hsu Winston
Nhu David
Touch Micro-System Technology Inc.
LandOfFree
Method of manufacturing suspension structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing suspension structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing suspension structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4000092