Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Reexamination Certificate
2006-05-16
2006-05-16
Parker, Kenneth (Department: 2815)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
C438S622000, C438S672000
Reexamination Certificate
active
07045379
ABSTRACT:
In a method of manufacturing a surface shape recognition sensor, first and second interconnections are formed on a semiconductor substrate. An interlayer dielectric film on the semiconductor substrate covers the interconnections. A first metal film is electrically connected to the interconnections through first and second through holes in the interlayer dielectric film. A first mask pattern on the first metal film covers predetermined first and second regions corresponding to the through holes, respectively. The exposed first metal film is selectively removed to form a sensor electrode and connection electrode film, formed of the first metal film, in the first and second regions, respectively. An insulating passivation film on the interlayer dielectric film covers the sensor electrode and connection electrode film. A third through hole in the passivation film reaches the connection electrode film. A second metal film on the passivation film is in contact with the exposed connection electrode film. A second mask pattern on the second metal film has a pattern portion on a predetermined region. The second metal film is selectively removed using the second mask pattern as a mask to form a ground electrode connected to the second interconnection through the connection electrode film.
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Kumazaki Toshihiko
Kyuragi Hakaru
Machida Katsuyuki
Oonishi Tetsuya
Tanabe Yasuyuki
Blakely & Sokoloff, Taylor & Zafman
Landau Matthew C
Nippon Telegraph and Telephone Corporation
NTT Electronics Corporation
Parker Kenneth
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