Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1990-05-21
1991-09-24
Beck, Shrive
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505702, 505725, 505706, 427 38, 427 62, 427 63, 437910, B05D 512, B05D 306
Patent
active
050513966
ABSTRACT:
A manufacturing method of Josephson devices is described. A superconducting ceramic film is deposited on a non-conductive surface and partly spoiled in order to form a barrier film by which two superconducting regions is separated. The spoiling is performed by adding a spoiling element into the ceramic film by ion implantation.
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patent: 4499119 (1985-02-01), Smith
Koch et al, "Quantum interference devices made from superconducting oxide thin films," Appl. Phys. Lett. 51(3) Jul. 1987, pp. 200-202.
Koinuma et al, "Preparation of (La.sub.1-x Sr.sub.x).sub.2 CuO.sub.4-8 superconducting films by screen printing method," Jpn. J. Appl. Phys. 26(4) Apr. 1987 L399-401.
Lee et al, "Microprobe Characterization of Sputtered high Tc superconducting films on silicon," AIP No. 165 (Anaheim, CA) Nov. 1987, pp. 427-434.
Tarascon et al, "3d-metal doping of the high-temperature superconducting perovskites La-Sr-Cu-O and Y-Ba-Cu-O," Phys. Rev. B, vol. 36(16) Dec. 1987, pp. 8393-8400.
Harris, "Preparation-of-Superconducting Weak Links in Molybdenum Films by ion implantation," IEEE Transactions on Magnetics, vol. MAG-11, No. 21975 pp. 785-788.
Singh et al, "High-temperature superconducting thin films, high-speed electronics perspective," AIP No. 165 (Anaheim, CA) Nov. 1987, pp. 211-220.
Beck Shrive
King Roy V.
Semiconductor Energy Laboratory Co,. Ltd.
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