Method of manufacturing super channel TFT structure

Details Method of manufacturing super channel TFT structure Method of manufacturing super channel TFT structure

1993-07-26

1994-10-11

Thomas, Tom

Fishing, trapping, and vermin destroying

437 84, 437 21, 437106, 437131, 148DIG150, 148DIG160, H01L 21265

Patent

active

053547004

ABSTRACT:
An FET thin film transistor is formed with a channel formed of a Si/Si.sub.1-x Ge.sub.x /Si three layer sandwich which serves as the carrier transfer channel. The percentage of germanium is preferably less than 30% and should be less than about 50%. The TFT can be structured as top gate, bottom gate or twin gate structure. The Si/Si.sub.1-x Ge/Si sandwich layer is processed in a continuous process under computer control.

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S. M. Sze, "Physics of Semiconductor Devices", pp. 568-570, 1969.

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