Method of manufacturing sub-micron silicon-carbide powder

Details Method of manufacturing sub-micron silicon-carbide powder Method of manufacturing sub-micron silicon-carbide powder

2011-05-10

2011-05-10

Langel, Wayne (Department: 1736)

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

C501S088000

Reexamination Certificate

active

07939044

ABSTRACT:
A method of manufacturing a silicon carbide powder with submicron size of powder particles wherein a homogeneous reactant mixture comprising a source of silicone, a source of carbon, and polytetrafluoroethylene is locally preheated in a sealed reaction chamber filled with an inert gas under pressure of 20 atm to 30 atm to a temperature sufficient to initiate an exothermic self-propagating reaction ranges from 650K to 900K. In the aforementioned homogeneous reactant mixture, the carbon source is used in the amount from 63 wt % to 68%, the silicon source is used in the amount of from 20 wt. % to 25 wt. %%, and the activated additive is used in the amount of from 8 wt. % to 15 wt. % per 100% of the entire homogeneous reactant mixture.

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