Metal treatment – Compositions – Heat treating
Patent
1979-09-04
1981-04-14
Rutledge, L. Dewayne
Metal treatment
Compositions
Heat treating
148187, 357 23, 357 91, H01L 21265
Patent
active
042617618
ABSTRACT:
Improved, high performance MOS transistors are provided by a method that includes providing an oxygen-impermeable mask on a selected region of a semiconductor substrate, oxidizing the unmasked portion of the surface to provide a thick oxide at least partially recessed in the substrate, which layer includes a smoothly tapered beak that extends between the margin of the mask and the underlying silicon surface, and, after removing the mask, implanting a selected impurity in the substrate beneath the selected region to form a thin impurity layer that terminates at a sloped portion of the substrate formed by the oxidation step.
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Ritchie Arthur D.
Sato Shuichi
Yamaguchi Tadanori
Roy Upendra
Rutledge L. Dewayne
Tektronix Inc.
Winkelman John D.
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