Method of manufacturing sub-micron channel width MOS transistor

Metal treatment – Compositions – Heat treating

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148187, 357 23, 357 91, H01L 21265

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active

042617618

ABSTRACT:
Improved, high performance MOS transistors are provided by a method that includes providing an oxygen-impermeable mask on a selected region of a semiconductor substrate, oxidizing the unmasked portion of the surface to provide a thick oxide at least partially recessed in the substrate, which layer includes a smoothly tapered beak that extends between the margin of the mask and the underlying silicon surface, and, after removing the mask, implanting a selected impurity in the substrate beneath the selected region to form a thin impurity layer that terminates at a sloped portion of the substrate formed by the oxidation step.

REFERENCES:
patent: 3961999 (1976-06-01), Antipov
patent: 4013484 (1977-03-01), Boleky et al.
patent: 4029522 (1977-06-01), De La Moneda
patent: 4033026 (1977-07-01), Pashley
patent: 4044454 (1977-08-01), Magdo
patent: 4052229 (1977-10-01), Pashley
patent: 4078947 (1978-03-01), Johnson et al.
patent: 4101344 (1978-07-01), Kooi et al.
patent: 4171229 (1979-10-01), Simi et al.
patent: 4175983 (1979-11-01), Schwabe
Oldham, W. G., Scientific American, 237, (Sep. 1977), p. 111.
Knepper, R. W., IBM-TDB, 15, (1973), 2919.
Makris et al., IBM-TDB, 16, (1974), 3240.

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