Method of manufacturing step cut type insulated gate SIT having

Details Method of manufacturing step cut type insulated gate SIT having Method of manufacturing step cut type insulated gate SIT having

1991-08-20

1992-12-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437192, 437193, 437203, H01L 21265, H01L 2144

Patent

active

051697955

ABSTRACT:
This invention provides a step cut type insulated gate static induction tsistor having a first main electrode formed in one major surface of a semiconductor substrate, a second main electrode formed in a bottom portion of a U-shaped groove formed in one major surface of a semiconductor substrate, a control electrode formed on a side wall of the U-shaped groove and consisting of a thin insulating film and a polysilicon layer, and a low-resistance electrode of a refractory metal layer or a refractory metal silicide layer formed in at least part of the side wall of the polysilicon layer of the control electrode.

REFERENCES:
patent: 4407059 (1983-10-01), Sasaki
patent: 4454526 (1984-06-01), Nishizawa et al.
patent: 4764480 (1988-08-01), Vora
patent: 4851889 (1989-07-01), Matsuzaki
patent: 5047812 (1991-09-01), Pfiester

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